The combined effect of slippage and energy spread in self-amplified-spontaneous-emission Free Electron Laser devices, operating in single spike regime, may impose limitations on the relevant performance. If the slippage is larger than the electron bunch length, the saturated power is significantly reduced. We provide a simple scaling formula capable of parameterizing the effect in terms of the device parameter and discuss possible mechanisms allowing the power output optimization.
The effect of slippage on the saturated power in short pulse FEL SASE devices
AutoriGiuseppe Dattoli; Emanuele Di Palma, Simonetta Pagnutti; Elio Sabia; Federico Nguyen
Parole chiave (Tematica)energy spread laser slippage
FonteOptik - International Journal for Light and Electron Optics
179 · November 2018